Sign In | Join Free | My qualitytoyschina.com
China ShenZhen Mingjiada Electronics Co.,Ltd. logo
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
Verified Supplier

3 Years

Home > Integrated Circuit Chip >

TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power

ShenZhen Mingjiada Electronics Co.,Ltd.
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power

Brand Name : Original Factory

Model Number : IMBG65R048M1H

Certification : Lead free / RoHS Compliant

Place of Origin : CN

MOQ : 10

Price : Contact for Sample

Payment Terms : T/T, L/C, Western Union

Delivery Time : 5-8 work days

Packaging Details : TO-263-8

Part Number : IMBG65R048M1H

Peak drain current(Max) : 99A

Gate Charge (Qg) (Max) @ Vgs : 33 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds : 1118 pF @ 400 V

Drain-source breakdown voltage(Min) : 650V

Operating Temperature : -55°C ~ 175°C (TJ)

Contact Now

TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power​

Product Description Of IMBG65R048M1H

IMBG65R048M1H is 650V CoolSiC M1 SiC Trench Power Device, Surface Mount.

Specification Of IMBG65R048M1H

Part Number IMBG65R048M1H
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
64mOhm @ 20.1A, 18V

Features Of​ IMBG65R048M1H

  • Optimized switching be havior at higher currents
  • Commutation robust fast body diode with low Qf
  • Superior gate oxide reliability
  • Tj,max=175°C and excellent thermal behavior

Other Electronic Components In Stock​

Part Number Package
RT8567AGQW WQFN20
IRG4PSH71UPBF SUPER-247
PIC18F66J11-I/PT TQFP64
MX29GL256EHT2I-90Q TSOP56
ITG-3600 QFN16
AXK7L24223G SMD


FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.


Quality TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power wholesale

TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: ShenZhen Mingjiada Electronics Co.,Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)